The doping mechanism is an essential aspect in understanding the behavior of semiconductor materials. It involves the intentional introduction of impurity atoms into a crystal lattice to enhance its electrical or optical properties. This process is crucial for the development of various electronic and optoelectronic devices, such as transistors, diodes, and solar cells. Doping mechanisms can vary based on the type of impurity atoms introduced and the desired result. Commonly used dopants include elements like phosphorus, boron, and arsenic, which can alter the conductivity and electronic band structure of the material. Understanding the doping mechanism is crucial in optimizing the performance of semiconductor devices. Example sentences: 1. The doping mechanism of adding phosphorus atoms increases the electron concentration in the silicon crystal. 2. Understanding the doping mechanism is essential for engineering high-performance photovoltaic cells. 3. The doping mechanism in semiconductor materials plays a crucial role in enhancing device functionality.
掺杂机理,doping mechanism
1)doping mechanism掺杂机理
1.The recent research of N-doped TiO_2 photocatalyst is summarized,including sample preparation,doping mechanisms and visible light response mechanisms.概括了最近报道的N掺杂TiO_2可见光光催化材料的研究成果,其中包括样品制备的进展、掺杂机理的研究和可见光响应理论的研究。
2.In this paper,doping mechanism and preparation methods of this photocatalyst are introduced and in the meanwhile the development tendency in this field predicted.本文介绍了氮掺杂TiO2的掺杂机理、制备方法,并预测了今后的研究方向。
3.Thedoping mechanism and the apparent behavior of doping kinetics of the PAn were discussed.8T)环境下,采用乳液法合成复合磺酸掺杂聚苯胺(PAn),探讨了PAn的掺杂机理,并对聚合过程中PAn的宏观掺杂动力学行为进行了研究。
英文短句/例句
1.Research on Yb~(3+) doping mechanism of ytterbium-doped fiber掺镱石英光纤中Yb~(3+)掺杂机理的研究
2.Preparation of P-type ZnO Thin Films and Study on the Doping Mechanisms;p型ZnO薄膜的制备及掺杂机理研究
3.Study on the Mechanism and Method of P-type Doping in GaN;GaN材料P型掺杂机理及方法的研究
4.Research on Gas Sensitive Properties and Mechanism Models of ZnSnO_3 with Additives;ZnSnO_3掺杂气敏特性及其机理模型研究
5.Study on the Strengthening Mechanism of Molybdenum Wire Doped with Si、Al、K;Si、Al、K掺杂钼丝强化机理研究
6.Mechanism of P-type ZnO by Li-N Co-dopingLi、N共掺杂实现P型ZnO的机理探讨
7.Mechanism of dehydrogenating properties of Ni doped MgH_2 systemsNi掺杂MgH_2体系解氢性能的机理
8.Study on Absorb-hydrogen Principle of Hydrogen Storage Alloys and Functions of Substitute Element in Hydrogen Storage Alloys;储氢合金吸氢机理及掺杂元素作用机制的研究
9.AFFECTION OF POLYMER DOPING TO SOUND ABSORPTION OF FOAM CERAMICS有机掺杂修饰对泡沫陶瓷吸声性能的影响机理
10.The Mechanism of Structural Change in Au～(3+)-doped BK7 Glass Irradiated by Femtosecond Laser;激光诱导贵金属掺杂玻璃的微结构变化机理
11.Study on the Property and Mechanism Sensitive to Hydrogen of Tungsten Oxide Films Doped Catalyst;WO_3掺杂薄膜的性能及其氢敏机理的研究
12.The Structure and Bonding Linkage Mechanism of the Calcium Silicate Hydrates Contained the Organic Complex Molecule;掺杂有机大分子水化硅酸钙的结构及键合原理
13.Researches on the Behaviours of Ions Doption and Mechanism of TiO_2 Photocatalytic Material;二氧化钛光催化材料离子掺杂行为及机理研究
14.The Study on Electroluminescence Performance and Electroluminescence Mechanism of Porphyrin Doped Organic Light-emitting Devices;卟啉掺杂电致发光器件的制备及其机理研究
15.Effects of substitutions of Nd~(3+) for Sr~(2+) on the properties of SrBi_2Nb_2O_9 ceramics and their mechanismSr位Nd掺杂对SrBi_2Nb_2O_9性能的影响及机理研究
16.Mechanism Research Progress on Modification of Nonmetal Doping TiO_2 PhotocatalystTiO_2光催化剂非金属掺杂的机理研究进展
17.Study on Luminescent Property and Energy Transfer Mechanism of Multiple Rare Earth Chelates and the Doping Gel Glass;双稀土有机配合物及其掺杂凝胶玻璃的光谱性质和传能机理研究
18.Study on Absorb-Hydrogen Mechanism and Functions of Substitute Element in AB_2 Type Laves Phase Hydrogen Storage Alloys;AB_2型Laves相储氢合金吸氢机理及掺杂元素作用机制的研究
相关短句/例句
physical mixture物理掺杂
1.: Investigation about three kinds of nickel electrodes modified by cobalt was operated includingphysical mixture , chemical deposition and covering cobalt .研究了用物理掺杂、化学镀、包覆等三种方式饰钴后的镍电极的性能。
3)Ormosil有机掺杂
1.pH Sensors Based on RubberyOrmosils Preparation and Their Spectrum Studies;有机掺杂溶胶-凝胶法制备pH敏感膜及其光谱响应的研究
4)random doping随机掺杂
5)doping mechanism掺杂机制
6)doped organic thin film有机掺杂薄膜
延伸阅读
半导体材料掺杂半导体材料掺杂doping for semiconductor materialbondootl Col}{00 ehonzo半导体材料掺杂(doping for semiconduCtormaterial)对材料掺入特定的杂质以取得预期的物理性能与参数的半导体材料制备方法，在大多数情况下，是使用掺杂后的半导体材料进行器件制备。掺杂的具体目的有:(l)获得预期的导电类型，如p型掺杂或n型(见半导体材料导电机理)掺杂;(2)获得预期的电阻率、载流子浓度(见半导体材料导电机理)，如重掺单晶(见简并半导体)、半绝缘砷化稼的制备;(3)获得低的少子寿命(见半导体材料导电机理)，如锗中掺金;(4)获得晶体的良好力学性能，如硅中掺氮;(5)提高发光效率，改变发光波长，如磷化稼中掺氮、掺氧(见发光用半导体材料);(6)形成低维材料及超晶格(见半导体超晶格);(7)调整晶格匹配，如硅中掺锡。对掺杂的要求主要是:精度、均匀性、分布空间。掺杂的方法有熔体掺杂、气相掺杂、中子擅变掺杂、离子注入掺杂、表面涂覆掺杂(见区熔硅单晶)。掺杂是在半导体材料制备过程的某一个或几个工序中进行，大多数是在单晶拉制过程中进行掺杂，薄膜材料则在薄膜制备过程中进行掺杂，而中子擅变掺杂、离子注入掺杂则离开晶体制备而成为独立的工序。(万群)
